Philips Semiconductors
Product specification
STARplugTM
TEA152x family
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Duty factor regulator (pin REG)
VREG input voltage
2.4
−
2.5
20
−
2.6
−
V
GV(erroramp) voltage gain of error amplifier
VREG(clamp) clamping voltage at pin REG
dB
V
IREG = 6 mA
−
7.5
Valley switching (not implemented in TEA152xAJM versions)
dV/dtvalley
fvalley
dV/dt for valley recognition
−102
−
102
800
V/µs
ringing frequency for valley
switching
N × Vo = 100 V
200
550
kHz
td(valley-swon) delay from valley recognition to
switch-on
−
150
−
ns
Current and short circuit winding protection
Vsource(max) maximum source voltage
dV/dt = 0.1 V/µs
0.47
0.50
160
0.53
185
V
td(propagation) delay from detecting VSRC(max) to dV/dt = 0.5 V/µs
−
ns
switch-off
Vswp
tleb
short circuit winding protection
voltage
dV/dt = 0.5 V/µs
0.7
0.75
350
0.8
V
blanking time for current and short
circuit winding protection
250
450
ns
Output stage (FET)
IL(drain)
drain leakage current
Vdrain = 650 V
−
−
125
−
µA
V
V(BR)drain
RDS(on)
drain breakdown voltage
Tj > 0 °C
650
−
−
drain-source on-state resistance
of TEA1520
Tj = 25 °C; Isource = −0.06 A
Tj = 100 °C; Isource = −0.06 A
Tj = 25 °C; Isource = −0.125 A
Tj = 100 °C; Isource = −0.125 A
Tj = 25 °C; Isource = −0.25 A
Tj = 100 °C; Isource = −0.25 A
Tj = 25 °C; Isource = −0.5 A
Tj = 100 °C; Isource = −0.5 A
Tj = 25 °C; Isource = −1.0 A
Tj = 100 °C; Isource = −1.0 A
48
68
24
34
12
17
6.5
9.0
3.4
4.8
75
55.2
78.2
27.6
39.1
13.8
19.6
7.5
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
ns
−
drain-source on-state resistance
of TEA1521
−
−
drain-source on-state resistance
of TEA1522
−
−
drain-source on-state resistance
of TEA1523
−
−
10.0
3.9
drain-source on-state resistance
of TEA1524
−
−
5.5
tdrain(f)
drain fall time
Vi = 300 V; no external capacitor at
drain
−
−
Temperature protection
Tprot(max) maximum temperature threshold
Tprot(hys) hysteresis temperature
150
160
2
170
°C
°C
−
−
2000 Sep 08
11
NXP [ NXP ]
