TDA8920B
Philips Semiconductors
2 × 100 W class-D power amplifier
001aab237
001aab238
200
240
P
o
(1)
(W)
160
(1)
(2)
P
o
(W)
(2)
160
120
80
40
0
(3)
(4)
(3)
(4)
80
0
10
15
20
25
30
35
10
15
20
25
30
35
V
(V)
V (V)
S
S
f = 1 kHz.
f = 1 kHz.
(1) 1 × 6 Ω BTL configuration.
(2) 1 × 8 Ω BTL configuration.
(3) 2 × 3 Ω SE configuration.
(4) 2 × 4 Ω SE configuration.
(1) 1 × 6 Ω BTL configuration.
(2) 1 × 8 Ω BTL configuration.
(3) 2 × 3 Ω SE configuration.
(4) 2 × 4 Ω SE configuration.
Fig 22. Output power as a function of supply voltage;
THD + N = 0.5 %.
Fig 23. Output power as a function of supply voltage;
THD + N = 10 %.
001aab239
001aab240
45
45
G
G
(dB)
(dB)
40
40
(1)
(2)
(1)
35
35
(2)
(3)
(4)
30
30
(3)
(4)
25
25
20
20
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Vi = 100 mV; Rs = 5.6 kΩ; Ci = 330 pF; Vp = ±27 V.
(1) 1 × 8 Ω BTL configuration.
Vi = 100 mV; Rs = 0 Ω; Ci = 330 pF; Vp = ±27 V.
(1) 1 × 8 Ω BTL configuration.
(2) 1 × 6 Ω BTL configuration.
(2) 1 × 6 Ω BTL configuration.
(3) 2 × 4 Ω BTL configuration.
(3) 2 × 4 Ω BTL configuration.
(4) 2 × 3 Ω BTL configuration.
(4) 2 × 3 Ω BTL configuration.
Fig 24. Gain as a function of frequency; RS = 5.6 kΩ
Fig 25. Gain as a function of frequency; RS = 0 Ω and
and Ci = 330 pF.
Ci = 330 pF.
9397 750 13356
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 October 2004
25 of 34
NXP [ NXP ]
