TDA8920B
Philips Semiconductors
2 × 100 W class-D power amplifier
001aab229
001aab230
2
2
10
10
(THD + N)/S
(THD + N)/S
(%)
(%)
10
10
1
1
−1
−1
10
10
(1)
(2)
(1)
−2
−2
(2)
10
10
10
−3
−3
10
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Vp = ±27 V; 2 × 3 Ω SE configuration.
Vp = ±27 V; 2 × 4 Ω SE configuration.
(1) Pout = 10 W.
(2) Pout = 1 W.
(1) Pout = 1 W.
(2) Pout = 10 W.
Fig 14. (THD + N)/S as a function of frequency; SE
Fig 15. (THD + N)/S as a function of frequency; SE
configuration with 2 × 3 Ω load.
configuration with 2 × 4 Ω load.
001aab231
001aab232
2
2
10
10
(THD + N)/S
(THD + N)/S
(%)
(%)
10
10
1
1
−1
−1
10
10
(1)
(1)
−2
−2
10
10
(2)
(2)
−3
−3
10
10
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
Vp = ±27 V; 1 × 6 Ω BTL configuration.
(1) Pout = 1 W.
(2) Pout = 10 W.
Vp = ±27 V; 1 × 8 Ω BTL configuration.
(1) Pout = 1 W.
(2) Pout = 10 W.
Fig 16. (THD + N)/S as a function of frequency; BTL
Fig 17. (THD + N)/S as a function of frequency; BTL
configuration with 1 × 6 Ω load.
configuration with 1 × 8 Ω load.
9397 750 13356
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 — 1 October 2004
23 of 34
NXP [ NXP ]
