Philips Semiconductors
Product specification
Class AB stereo headphone driver
CHARACTERISTICS
V
DD
= 5 V; V
SS
= 0 V; T
amb
= 25
°C;
f
i
= 1 kHz; R
L
= 32
Ω;
unless otherwise specified.
SYMBOL
Supplies
V
DD
supply voltage
single
dual
V
SS
I
DD
P
tot
V
I(os)
I
bias
V
CM
G
v
I
O
R
O
V
O
negative supply voltage
supply current
total power dissipation
no load
no load
3.0
1.5
−1.5
−
−
−
−
0
R
L
= 5 kΩ
(THD + N)/S < 0.1%
note 1
R
L
= 16
Ω;
note 1
R
L
= 5 kΩ; note 1
PSRR
α
cs
C
L
power supply rejection ratio
channel separation
R
L
= 5 kΩ
load capacitance
AC characteristics
(THD + N)/S total harmonic distortion plus note 2
noise-to-signal ratio
note 2; R
L
= 5 kΩ
S/N
f
G
P
o
C
i
SR
B
Notes
1. Values are proportional to V
DD
; (THD + N)/S < 0.1%.
2. V
DD
= 5.0 V; V
O(p-p)
= 3.5 V (at 0 dB).
signal-to-noise ratio
unity gain frequency
maximum output power
input capacitance
slew rate
power bandwidth
unity gain inverting
unity gain inverting
open-loop; R
L
= 5 kΩ
(THD + N)/S < 0.1%
−
−
−
−
100
−
−
−
−
−
−70
0.03
−101
0.0009
110
5.5
60
3
5
20
−65
0.06
−
−
−
−
−
−
−
−
f
i
= 100 Hz;
V
ripple(p-p)
= 100 mV
−
−
−
0.75
1.5
0.1
−
−
−
−
5.0
2.5
−2.5
3
15
7.0
3.5
−3.5
5
25
−
−
3.5
−
−
−
4.25
3.5
4.9
−
−
−
200
PARAMETER
CONDITIONS
MIN.
TYP.
TDA1308
MAX.
UNIT
V
V
V
mA
mW
DC characteristics
input offset voltage
input bias current
common mode voltage
open-loop voltage gain
maximum output current
output resistance
output voltage swing
10
10
−
70
60
0.25
−
−
−
90
70
105
−
mV
pA
V
dB
mA
Ω
V
V
V
dB
dB
dB
pF
dB
%
dB
%
dB
MHz
mW
pF
V/µs
kHz
August 1994
6
PHILIPS [ NXP SEMICONDUCTORS ]
