Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
D.C. CHARACTERISTICS
Supply voltage range
V
3,6 to 20 V
P
Repetitive peak output current
I
<
typ.
<
2 A
ORM
14 mA
22 mA
Total quiescent current at V = 12 V
I
P
tot
A.C. CHARACTERISTICS
T
= 25 °C; V = 12 V; R = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3.
P L
amb
A.F. output power at d = 10% (note 1)
tot
with bootstrap:
V = 16 V; R = 4 Ω
P
P
typ.
>
6,5 W
P
L
o
3,6 W
4,2 W
2,3 W
1,0 W
V = 12 V; R = 4 Ω
P
L
o
typ.
typ.
typ.
V = 9 V; R = 4 Ω
P
P
P
L
o
V = 6 V; R = 4 Ω
P
L
o
without bootstrap:
V = 12 V; R = 4 Ω
P
typ.
typ.
typ.
typ.
3,0 W
23 dB
P
L
o
Voltage gain:
preamplifier (note 2)
power amplifier
total amplifier
G
G
G
v1
21 to 25 dB
29 dB
v2
27 to 31 dB
52 dB
v tot
50 to 54 dB
0,3 %
typ.
<
Total harmonic distortion at P = 1,5 W
d
tot
o
1 %
Frequency response; −3 dB (note 3)
B
60 Hz to 15 kHz
Input impedance:
>
100 kΩ
200 kΩ
20 kΩ
1 kΩ
preamplifier (note 4)
|Z |
i1
typ.
typ.
typ.
power amplifier
|Z |
i2
Output impedance preamplifier
Output voltage preamplifier (r.m.s. value)
|Z |
o1
d
< 1% (note 2)
V
>
0,7 V
tot
o(rms)
Noise output voltage (r.m.s. value; note 5)
R = 0 Ω
V
V
typ.
typ.
<
0,2 mV
0,6 mV
1,4 mV
S
n(rms)
n(rms)
R = 10 kΩ
S
Noise output voltage at f = 500 kHz (r.m.s. value)
B = 5 kHz; R = 0 Ω
V
typ.
8 µV
S
n(rms)
November 1982
5
NXP [ NXP ]
