Philips Semiconductors
Product specification
Low voltage mixer FM IF system with filter amplifier
and data switch
SA639
= -45dBm; FM modulation = 576kHz with
±288kHz
peak deviation, discriminator tank circuit Q=4. The parameters listed below are tested using
automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the
device. Use of an optimized RF layout will improve many of the listed parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
Mixer/Osc section (ext LO = -14dBm)
f
IN
f
OSC
Input signal frequency
External oscillator (buffer)
Noise figure at 110MHz
Third-order input intercept point
Conversion power gain
RF input resistance
RF input capacitance
Mixer output resistance
IF section
IF amp gain
Limiter gain
Input limiting -3dB
IF input impedance
IF output impedance
Limiter input impedance
Limiter output impedance
Limiter output level with no
load
RF/IF section (ext LO = -14dBm)
Data level
Data bandwidth
S/N
Signal-to-noise ratio
AM rejection
RF RSSI output with buffer
RF RSSI output rise time
(10kHz pulse, w/ 9.8MHz filter)
(no RSSI bypass capacitor)
RF RSSI output fall time
(10kHz pulse, w/ 9.8MHz filter)
(no RSSI bypass capacitor)
RSSI range
RSSI accuracy
SINAD
S/N
RF level = -85dBm
RF level = -100dBm
9.45
5.8
No modulation for noise
80% AM 1kHz
RF level = -90dBm
RF level = -45dBm
RF level = -10dBm
IF frequency = 9.8MHz
RF level = -45dBm
RF level = -28dBm
IF frequency = 9.8MHz
RF level = -45dBm
RF level = -28dBm
2.0
1.8
80
±1.5
12
10
14.55
14.2
µs
dB
dB
dB
dB
0.8
0.8
µs
0
0.5
0.8
R
L
= 10kΩ, C
L
= 30pF
260
2.1
56.1
34.8
0.232
0.732
1.032
360
2.4
60
36
0.4
0.9
1.2
2.7
63.9
37.2
0.568
1.068
1.368
0.75
1.3
1.6
V
mV
P-P
MHz
dB
dB
Test at Pin 22
38.86
50.44
40
52
–100
330
330
330
300
130
41.14
53.56
dB
dB
dBm
Ω
Ω
Ω
Ω
mV
RMS
(Pin 24)
Single-ended input
Matched f1=110.592MHz;
f2=110.852MHz
6
0.2
10.4
-11
8.6
500
500
11
-9.5
9.2
800
3.5
330
11.6
-8
11.1
MHz
MHz
dB
dBm
dB
Ω
pF
Ω
-3σ
SA639
TYP
+3σ
MAX
UNITS
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C; V
CC
= +3V, unless otherwise stated. RF frequency = 110.592MHz ;LO frequency = 120.392MHz; IF frequency = 9.8MHz; RF level
1998 Feb 10
4
PHILIPS [ NXP SEMICONDUCTORS ]
