NXP Semiconductors
PMLL4148L; PMLL4448
High-speed switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
= 25
°C
Min
-
-
−65
−65
Max
500
200
+200
+200
Unit
mW
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
= 25
°C
prior to surge.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min
-
-
Typ
-
-
Max
350
300
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
PMLL4148L
PMLL4448
I
R
I
R
C
d
t
rr
V
FR
[1]
[2]
Conditions
I
F
= 50 mA
I
F
= 5 mA
I
F
= 100 mA
V
R
= 20 V
V
R
= 20 V; T
j
= 150
°C
Min
-
620
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
1
720
1
25
50
3
4
4
2.5
Unit
V
mV
V
nA
μA
μA
pF
ns
V
reverse current
reverse current
PMLL4448
diode capacitance
reverse recovery time
forward recovery voltage
V
R
= 20 V; T
j
= 100
°C
V
R
= 0 V; f = 1 MHz
-
-
When switched from I
F
= 10 mA to I
R
= 60 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 50 mA; t
r
= 20 ns.
PMLL4148L_PMLL4448
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 1 February 2011
3 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
