NXP Semiconductors
Product data sheet
NPN switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; see Fig.2; note 1
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= I
c
= 0; V
BE
= 500 mV;
f = 1 MHz
60
80
100
60
30
−
−
650
−
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
PMBT3904
MAX.
60
40
6
200
200
100
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
UNIT
K/W
MAX.
50
50
UNIT
nA
nA
300
−
−
200
300
850
950
4
8
mV
mV
mV
mV
pF
pF
2004 Jan 12
3
PHILIPS [ NXP SEMICONDUCTORS ]
