NXP Semiconductors
PESD1CAN-U
CAN bus ESD protection diode
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
V
RWM
I
RM
V
BR
V
CL
C
d
C
d
/C
d
r
dyn
[1]
[2]
[3]
[4]
Conditions
Min
-
Typ
-
1
27.8
-
-
9.3
7.2
0.1
0.1
1.5
Max
24
50
30.3
35
50
12
-
-
-
-
Unit
V
nA
V
V
V
pF
pF
%
%
reverse standoff
voltage
reverse leakage
current
breakdown voltage
clamping voltage
diode capacitance
V
RWM
= 24 V
I
R
= 5 mA
I
PP
= 1 A
I
PPM
= 3 A
f = 1 MHz; V
R
= 0 V
f = 1 MHz; V
R
= 2.5 V
capacitance matching f = 1 MHz; V
R
= 0 V
f = 1 MHz; V
R
= 2.5 V
dynamic resistance
I
R
= 10 A
-
25.4
-
-
-
-
-
-
-
Device stressed with 8/20
s
exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1 or 2 to 3.
C
d
is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured
between pin 2 and pin 3.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD1CAN-U
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 27 March 2013
3 of 12
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