Philips Semiconductors
Product specification
Low power clock/calendar
PCF8593
10 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDD
IDD
PARAMETER
MIN.
MAX.
UNIT
supply voltage (pin 8)
supply current (pin 8)
supply current (pin 4)
input voltage
−0.8
−
+7.0
50
V
mA
mA
V
ISS
−
50
VI
−0.8
−
VDD + 0.8
10
II
input current
mA
mA
mW
mW
°C
IO
DC output current
−
10
Ptot
PO
total power dissipation per package
power dissipation per output
operating ambient temperature
storage temperature
−
300
−
50
Tamb
Tstg
−40
−65
+85
+150
°C
11 HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take precautions appropriate to handling MOS devices Advice can be found in Data Handbook IC12 under
“Handling MOS Devices”.
12 DC CHARACTERISTICS
VDD = 2.5 to 6.0 V; VSS = 0 V; Tamb = −40 to +85 °C; fosc = 32 kHz; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.(1)
MAX.
UNIT
Supply
VDD
supply voltage
I2C-bus active
2.5
−
6.0
V
(operating mode)
I2C-bus inactive
1.0
−
6.0
V
VDDosc
supply voltage
note 2
(quartz oscillator)
Tamb = 0 to 70 °C
Tamb = −40 to 85 °C
1.0
1.2
−
−
−
−
6.0
6.0
200
V
V
IDD
supply current
(operating mode)
fscl = 100 kHz; clock mode;
note 3
µA
IDDO
supply current
(clock mode with I2C-bus
inactive)
fscl = 0 Hz;
inputs at VDD or VSS
VDD = 2 V
VDD = 5 V
−
−
1.0
4.0
8.0
15
µA
µA
SDA, SCL, INT and RESET
VIL
VIH
IOL
ILI
LOW level input voltage
0
−
−
−
−
0.3VDD
VDD
−
V
HIGH level input voltage
LOW level output current
input leakage current
0.7VDD
V
VOL = 0.4 V
3
mA
µA
VI = VDD or VSS
−1
+1
1997 Mar 25
19
NXP [ NXP ]
