Philips Semiconductors
Product specification
Temperature monitor for microprocessor systems
NE1617
ELECTRICAL CHARACTERISTICS
V
DD
= 3.3V; T
= 0°C to +125°C unless otherwise noted.
amb
LIMITS
TYP.
PARAMETER
CONDITIONS
UNIT
MAX.
MIN.
Temperature resolution
Local temperature error
1
°C
T
= +60°C to +100°C
< ±1
< ±2
±2
±3
°C
°C
°C
°C
V
amb
T
amb
= 0°C to +125°C
T
T
= +60°C to +100°C
= 0°C to +125°C
±3
remote
remote
Remote temperature error
±5
Under voltage lockout
V
V
supply (Note 1)
2.0
1.0
2.95
2.5
70
DD
Power-on reset threshold
supply (falling edge) (Note 2)
V
DD
Conversion rate = 0.25/sec
Conversion rate = 2/sec
SMBus inactive
µA
µA
µA
Power supply current (average)
180
10
Power supply current (standby)
Conversion time
3
From stop bit to conversion complete,
both channels
170
+30
ms
Conversion rate error
Percentage error in programmed rate
HIGH level
–30
%
100
10
µA
µA
Remote sensor source current
LOW level
Momentary as the address is being read
(Notes 3 and 4)
Address pin bias current
160
µA
NOTES:
1. V (rising edge) voltage below which the ADC is disabled.
DD
2. V (falling edge) voltage below which the logic is reset.
DD
3. Address is read a power up and at start of conversion for all conversions except the fastest rate.
4. Due to the bias current, any pull-up/down resistors should be ≤ 2kΩ.
5
1999 Mar 19
NXP [ NXP ]
