Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ24N
50
16
ID/A
40
10.0
9.5
9.0
8.5
8.0
7.5
7.0
20
6.5
6.0
10
5.5
5.0
4.5
4.0
14
12
VGS/V =
9
gfs/S
8
7
6
5
4
3
2
30
0
0
2
4
VDS/V 6
8
10
0
5
10
ID/A
15
20
25
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
RDS(ON)/mOhm
VGS/V =
6
100
6.5
90
80
70
60
50
7
8
9 10
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
BUK959-60
120
110
2.5
a
Rds(on) normlised to 25degC
2
1.5
1
0
5
10 ID/A 15
20
25
30
0.5
-100
-50
0
50
Tmb / degC
100
150
200
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
25
ID/A
20
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 10 A; V
GS
= 10 V
VGS(TO) / V
max.
4
typ.
BUK759-60
5
15
3
min.
10
2
5
Tj/C =
0
175
25
1
0
1
2
3
4
5
VGS/V
6
7
8
9
0
-100
-50
0
50
Tj / C
100
150
200
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
February 1999
4
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
