欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRF830 参数 Datasheet PDF下载

IRF830图片预览
型号: IRF830
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS晶体管额定雪崩能量 [PowerMOS transistor Avalanche energy rated]
分类和应用: 晶体晶体管局域网
文件页数/大小: 7 页 / 60 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
 浏览型号IRF830的Datasheet PDF文件第1页浏览型号IRF830的Datasheet PDF文件第2页浏览型号IRF830的Datasheet PDF文件第3页浏览型号IRF830的Datasheet PDF文件第4页浏览型号IRF830的Datasheet PDF文件第6页浏览型号IRF830的Datasheet PDF文件第7页  
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
15
VGS, Gate-Source voltage (Volts)
ID = 6 A
Tj = 25 C
250 V
PHP4N50
20
IF, Source-Drain diode current (Amps)
VGS = 0 V
PHP4N50
15
10
100 V
VDD = 400 V
10
150 C
5
Tj = 25 C
5
0
0
10
20
30
40
50
Qg, Gate charge (nC)
60
70
80
0
0
0.2
0.4
0.6
0.8
1
VSDS, Source-Drain voltage (Volts)
1.2
1.4
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
PHP4N50
10
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
1000
Switching times (ns)
VDD = 250 V
VGS = 10 V
RD = 39 Ohms
Tj = 25 C
td(off)
tf
tr
Non-repetitive Avalanche current, IAS (A)
100
25 C
Tj prior to avalanche = 125 C
1
VDS
10
td(on)
tp
ID
PHP6N50E
1E-05
1E-04
Avalanche time, tp (s)
1E-03
1E-02
1
0.1
1E-06
0
10
20
30
40
RG, Gate resistance (Ohms)
50
60
Fig.14. Typical switching times; t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.17. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
p
);
unclamped inductive load
1.15
1.1
1.05
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
10
Maximum Repetitive Avalanche Current, IAR (A)
Tj prior to avalanche = 25 C
1
1
0.95
0.9
0.85
-100
125 C
0.1
PHP6N50E
0.01
1E-06
-50
0
50
Tj, Junction temperature (C)
100
150
1E-05
1E-04
Avalanche time, tp (s)
1E-03
1E-02
Fig.15. Normalised drain-source breakdown voltage;
V
(BR)DSS
/V
(BR)DSS 25 ˚C
= f(T
j
)
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
March 1999
5
Rev 1.000