Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1
Zth j-mb, Transient thermal impedance (K/W)
D = 0.5
0.2
PHP3N60
0.1
0.1 0.05
0.02
0.01
single pulse
P
D
t
p
D=
t
p
T
t
T
0
20
40
60
80
100
Tmb / C
120
140
0.001
1us
10us
1ms
100us
10ms
tp, pulse width (s)
100ms
1s
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
ID%
Normalised Current Derating
15
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
120
110
100
90
80
70
60
50
40
30
20
10
0
ID, Drain current (Amps)
Tj = 25 C
PHP4N50
7V
10 V
6.5 V
10
6V
5.5 V
5
5V
VGS = 4.5 V
0
20
40
60
80
Tmb / C
100
120
140
0
0
5
10
15
20
VDS, Drain-Source voltage (Volts)
25
30
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.5. Typical output characteristics.
I
D
= f(V
DS
); parameter V
GS
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
5V
5.5 V
VGS = 6 V
PHP4N50
Tj = 25 C
100
ID, Drain current (Amps)
PHP4N50
4
10
S
RD
(O
=
N)
S
VD
/ID
3
tp = 10 us
100 us
6.5 V
7V
2
10 V
1
DC
1 ms
1
10 ms
0.1
10
100
1000
VDS, Drain-source voltage (Volts)
10000
0
0
5
10
ID, Drain current (Amps)
15
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance.
R
DS(ON)
= f(I
D
); parameter V
GS
March 1999
3
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
