Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF540, IRF540S
Source-Drain Diode Current, IF (A)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
100
Maximum Avalanche Current, I
AS
(A)
VGS = 0 V
175 C
Tj = 25 C
10
25 C
Tj prior to avalanche = 150 C
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
0.1
0.001
0.01
0.1
Avalanche time, t
AV
(ms)
1
10
Source-Drain Voltage, VSDS (V)
Fig.13. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.14. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
August 1999
6
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
