Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF540, IRF540S
FEATURES
•
’Trench’
technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 100 V
I
D
= 23 A
g
R
DS(ON)
≤
77 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies
The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF540S is supplied in the SOT404 (D
2
PAK) surface mounting package.
PINNING
PIN
1
2
3
tab
gate
drain
1
source
drain
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D
2
PAK)
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 175˚C
T
j
= 25 ˚C to 175˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C; V
GS
= 10 V
T
mb
= 100 ˚C; V
GS
= 10 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
23
16
92
100
175
UNIT
V
V
V
A
A
A
W
˚C
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
