Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF530N
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
SOT78 package, in free air
-
TYP. MAX. UNIT
-
60
1.9
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
V
GS(TO)
R
DS(ON)
g
fs
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
GS
= 10 V; I
D
= 9 A
T
j
= 175˚C
V
DS
= 25 V; I
D
= 9 A
V
GS
=
±
20 V; V
DS
= 0 V
V
DS
= 100 V; V
GS
= 0 V
V
DS
= 80 V; V
GS
= 0 V; T
j
= 175˚C
I
D
= 9 A; V
DD
= 80 V; V
GS
= 10 V
MIN.
100
89
2
1
-
-
-
6.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
3
-
80
-
11
10
0.05
-
-
-
-
6
36
18
12
3.5
4.5
7.5
633
103
61
-
-
4
-
6
110
275
-
100
10
250
40
5.6
19
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
mΩ
mΩ
S
nA
µA
µA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
pF
pF
pF
V
DD
= 50 V; R
D
= 2.7
Ω;
V
GS
= 10 V; R
G
= 5.6
Ω
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
-
I
F
= 17 A; V
GS
= 0 V
I
F
= 17 A; -dI
F
/dt = 100 A/µs;
V
GS
= 0 V; V
R
= 25 V
-
-
-
TYP. MAX. UNIT
-
-
0.92
55
135
17
68
1.2
-
-
A
A
V
ns
nC
August 1999
2
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
