HEF4066BT 参数 Datasheet PDF下载

Philips Semiconductors

Product specification

Quadruple bilateral switches

HEF4066B

gates

Fig.4 Test set-up for measuring R

ON

.

E

n

at V

DD

I

is

= 200

µA

V

SS

= 0 V

Fig.5 Typical R

ON

as a function of input voltage.

NOTE

To avoid drawing V

DD

current out of terminal Z, when switch current flows into terminals Y, the voltage drop across the

bidirectional switch must not exceed 0,4 V. If the switch current flows into terminal Z, no V

DD

current will flow out of

terminals Y, in this case there is no limit for the voltage drop across the switch, but the voltages at Y and Z may not

exceed V

DD

or V

SS

.

January 1995

4