Philips Semiconductors
Product specification
Quadruple bilateral switches
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Power dissipation per switch
For other RATINGS see Family Specifications
DC CHARACTERISTICS
T
amb
= 25
°C
V
DD
V
5
ON resistance
10
15
5
ON resistance
10
15
5
ON resistance
‘∆’ ON resistance
between any two
channels
OFF state leakage
current, any
channel OFF
E
n
input voltage
LOW
10
15
5
10
15
5
10
15
5
10
15
V
IL
I
OZ
∆R
ON
R
ON
R
ON
R
ON
SYMBOL
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2,25
4,50
6,75
TYP. MAX.
350
80
60
115
50
40
120
65
50
25
10
5
2500
Ω
245
Ω
175
Ω
340
Ω
160
Ω
115
Ω
365
Ω
200
Ω
155
Ω
−
−
−
−
−
Ω
Ω
Ω
nA
nA
1 V
2 V
2 V
E
n
at V
SS
P
max.
HEF4066B
gates
100
mW
CONDITIONS
E
n
at V
DD
V
is
= V
SS
to V
DD
see Fig.4
E
n
at V
DD
V
is
= V
SS
see Fig.4
E
n
at V
DD
V
is
= V
DD
see Fig.4
E
n
at V
DD
V
is
= V
SS
to V
DD
see Fig.4
200 nA
I
is
= 10
µA
see Fig.9
V
DD
V
SYMBOL
−40
T
amb
(°c)
+25
+85
MAX.
7,5
µA
15,0
µA
30,0
µA
1000 nA
CONDITIONS
MAX. MAX.
Quiescent device
current
Input leakage current at E
n
5
10
15
15
±
I
IN
I
DD
1,0
2,0
4,0
−
1,0
2,0
4,0
300
V
SS
= 0; all valid
input combinations;
V
I
= V
SS
or V
DD
E
n
at V
SS
or V
DD
January 1995
3
PHILIPS [ NXP SEMICONDUCTORS ]
