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Table 2
Per type BZX84-A/B/C27 to
A/B/C75
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±1%
(A)
MIN.
27
30
33
36
39
43
47
51
56
62
68
75
6
26.73
29.70
32.67
35.64
38.61
42.57
46.53
50.49
55.44
61.38
67.32
74.25
MAX.
27.27
30.30
33.33
36.36
39.39
43.43
47.47
51.51
56.56
62.62
68.68
75.75
Tol.
±2%
(B)
MIN.
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
MAX.
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
Tol. approx.
±5%
(C)
MIN.
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
at
I
Ztest
= 0.5 mA I
Ztest
= 2 mA
TYP.
65
70
75
80
80
85
85
90
100
120
150
170
MAX.
300
300
325
350
350
375
375
400
425
450
475
500
TYP. MAX.
25
30
35
35
40
45
50
60
70
80
90
95
80
80
80
90
130
150
170
180
200
215
240
255
MIN.
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
TYP.
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
MAX.
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
PEAK REVERSE
C
d
(pF)
at f = 1 MHz;
CURRENT
V
R
= 0 V
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
MAX.
2003 Apr 10
Philips Semiconductors
Voltage regulator diodes
BZX84-
Axxx
Bxxx
Cxxx
BZX84 series
Product specification
PHILIPS [ NXP SEMICONDUCTORS ]
