Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX84-A/B/C2V4
BZX84-A/B/C2V7
BZX84-A/B/C3V0
BZX84-A/B/C3V3
BZX84-A/B/C3V6
BZX84-A/B/C3V9
BZX84-A/B/C4V3
BZX84-A/B/C4V7
BZX84-A/B/C5V1
BZX84-A/B/C5V6
BZX84-A/B/C6V2
BZX84-A/B/C6V8
BZX84-A/B/C7V5
BZX84-A/B/C8V2
BZX84-A/B/C9V1
BZX84-A/B/C10
BZX84-A/B/C11
BZX84-A/B/C12
BZX84-A/B/C13
BZX84-A/B/C15 to 75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
CONDITIONS
I
F
= 10 mA; see Fig.3
0.9
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
MIN.
BZX84 series
MAX.
200
UNIT
mA
see Tables
1 and 2
−
−
−65
−65
250
40
+150
+150
mW
W
°C
°C
MAX.
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
UNIT
2003 Apr 10
4
PHILIPS [ NXP SEMICONDUCTORS ]
