Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
dI
R
--------
dt
PARAMETER
CONDITIONS
MIN.
BYV26 series
TYP.
MAX.
UNIT
maximum slope of reverse recovery when switched from
I
F
= 1 A to V
R
≥
30 V and
current
dI
F
/dt =
−1
A/µs;
BYV26A to C
see Fig.21
BYV26D and E
BYV26F and G
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 May 30
4
PHILIPS [ NXP SEMICONDUCTORS ]
