Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYV26A to E
BYV26F and G
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Figs 12 and 13
I
R
= 400 mA; T
j
= T
j max
prior to
surge; inductive load switched off
CONDITIONS
T
amb
= 60
°C;
see Figs 8 and 9
−
−
−
−
−65
−65
BYV26 series
MIN.
MAX.
6.0
6.4
30
10
+175
+175
A
A
A
UNIT
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYV26A to E
BYV26F and G
V
F
forward voltage
BYV26A to E
BYV26F and G
V
(BR)R
reverse avalanche breakdown
voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
I
R
reverse current
V
R
= V
RRMmax
; see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.16
t
rr
reverse recovery time
BYV26A to C
BYV26D and E
BYV26F and G
C
d
diode capacitance
BYV26A to C
BYV26D and E
BYV26F and G
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.20
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
150
V
V
V
V
V
V
V
µA
µA
I
F
= 1 A;
see Figs 14 and 15
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
MIN.
−
−
−
−
TYP.
−
−
−
−
MAX.
1.3
1.3
2.50
2.15
V
V
V
V
UNIT
−
−
−
−
−
−
−
−
−
45
40
35
30
75
150
−
−
−
ns
ns
ns
pF
pF
pF
1996 May 30
3
PHILIPS [ NXP SEMICONDUCTORS ]
