Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT11; BUT11A
handbook, halfpage
tr
≤30
ns
IB on
MBB731
90%
handbook, halfpage
VCC
IB
10%
t
RL
VIM
0
tp
T
MGE244
RB
D.U.T.
IB off
IC on
90%
IC
10%
ton
V
CC
= 250 V; t
p
= 20
µs;
V
IM
=
−6
to +8 V; t
p
/T = 0.01.
The values of R
B
and R
L
are selected in accordance with I
Con
and
I
Bon
requirements.
tf
ts
t
Fig.11 Test circuit resistive load.
Fig.12 Switching time waveforms with
resistive load.
handbook, halfpage
tr
IB on
90%
IB
10%
handbook, halfpage
VCC
−I
B off
IC on
t
LC
+I
B
LB
D.U.T.
VEB
MBH383
90%
IC
10%
tf
t
ts
toff
V
CC
= 300 V; V
EB
= 5 V; L
B
= 1
µH.
MGE238
Fig.13 Test circuit inductive load.
Fig.14 Switching time waveforms with
inductive load.
1997 Aug 13
7
PHILIPS [ NXP SEMICONDUCTORS ]
