Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT11; BUT11A
handbook, full pagewidth
1.6
MGB910
VBE
(V)
1.4
(1)
1.2
(2)
(3)
1.0
0.8
0
T
j
= 25
°C.
(1) I
C
= 5 A.
0.25
(2) I
C
= 3 A.
(3) I
C
= 1.5 A.
0.5
0.75
1.0
1.25
IB (A)
1.5
Fig.8 Base-emitter voltage as a function of base current.
handbook, halfpage
10
MGB873
2
10
handbook, halfpage
MBC095
(1)
VCEsat
(V)
(2)
(3)
hFE
VCE = 5 V
1V
1
10
10
−1
10
−2
10
−1
1
IB (A)
10
1
10
−2
10
−1
1
10
IC (A)
10
2
(1) I
C
= 1.5 A.
(2) I
C
= 3 A.
(3) I
C
= 5 A.
T
j
= 25
°C;
solid line: typical values; dotted line: maximum values.
Fig.9
Collector-emitter saturation voltage as a
function of base current.
Fig.10 DC current gain; typical values.
1997 Aug 13
6
PHILIPS [ NXP SEMICONDUCTORS ]
