Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
IC / A
100
IC / A
100
10
= 0.01
= 0.01
ICM max
ICM max
IC max
tp =
tp =
IC max
10
1
10 us
10 us
II
II
Ptot max
Ptot max
1
100 us
1 ms
100 us
1 ms
I
I
0.1
0.01
0.1
0.01
10 ms
DC
10 ms
DC
1000
1000
1
100
1
100
10
10
VCE / V
VCE / V
Fig.12. Forward bias safe operating area. Ths = 25˚C
Fig.13. Forward bias safe operating area. Ths = 25˚C
I
Region of permissible DC operation.
I
Region of permissible DC operation.
II Extension for repetitive pulse operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
July 1998
5
Rev 1.200
NXP [ NXP ]
