Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
ICsat
90 %
+ 50v
100-200R
IC
IB
10 %
Horizontal
tf
t
Oscilloscope
ts
IBend
Vertical
1R
t
100R
6V
30-60 Hz
- IBM
Fig.1. Test circuit for VCEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
1mH
250
200
LB
D.U.T.
BY228
IBend
-VBB
100
0
12nF
min
VCE / V
VCEOsust
Fig.2. Oscilloscope display for VCEOsust
.
Fig.5. Switching times test circuit.
ICsat
h
FE
BU508AD
TRANSISTOR
100
IC
IB
DIODE
t
t
IBend
10
20us
26us
64us
VCE
1
0.1
1
10
t
IC/A
Fig.3. Switching times waveforms.
Fig.6. Typical DC current gain. hFE = f (IC)
parameter VCE
July 1998
3
Rev 1.200
NXP [ NXP ]
