Philips Semiconductors
Product specification
Thyristor
logic level
BT169W Series
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
BT169
5
IT / A
Tj = 125 C
Tj = 25 C
BT169W
4
Vo = 1.0 V
Rs = 0.27 Ohms
3
typ
max
2
1
1
0.5
0
-50
0
0
0.5
1
VT / V
1.5
2
2.5
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
0.5
BT169
100
Zth j-sp (K/W)
BT169W
10
1
P
D
tp
0.1
t
0
-50
0
50
Tj / C
100
150
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
, R
GK
= 1 k
Ω
.
IH(Tj)
IH(25 C)
Fig.11. Transient thermal impedance Z
th j-sp
, versus
pulse width t
p
.
dVD/dt (V/us)
3
2.5
BT169
1000
100
2
1.5
1
0.5
0
-50
1
10
RGK = 1 kohms
0
50
Tj / C
100
150
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
,
R
GK
= 1 k
Ω
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
September 1997
4
Rev 1.200
PHILIPS [ NXP SEMICONDUCTORS ]
