Philips Semiconductors
Product specification
Thyristor
logic level
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
PARAMETER
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
pcb mounted, minimum footprint
pcb mounted; pad area as in fig:14
-
-
BT169W Series
TYP.
-
156
70
MAX.
15
-
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
, I
R
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
CONDITIONS
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ
I
T
= 2 A
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= V
DRM(max)
; I
T
= 10 mA; T
j
= 125 ˚C;
gate open circuit
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C;
R
GK
= 1 kΩ
MIN.
-
-
-
-
-
0.2
-
TYP.
50
2
2
1.35
0.5
0.3
0.05
MAX.
200
6
5
1.5
0.8
-
0.1
UNIT
µA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
t
gt
t
q
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
V
DM
=67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; R
GK
= 1k
Ω
I
TM
= 2 A; V
D
= V
DRM(max)
; I
G
= 10 mA;
dI
G
/dt = 0.1 A/µs
V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C;
I
TM
= 1.6 A; V
R
= 35 V; dI
TM
/dt = 30 A/µs;
dV
D
/dt = 2 V/µs; R
GK
= 1 kΩ
MIN.
-
-
-
TYP.
25
2
100
MAX.
-
-
-
UNIT
V/µs
µs
µs
September 1997
2
Rev 1.200
PHILIPS [ NXP SEMICONDUCTORS ]
