Philips Semiconductors
Product specification
Triacs
sensitive gate
BT138 series E
IGT(Tj)
IGT(25 C)
BT138
typ
IT / A
40
30
20
10
0
BT138E
Tj = 125 C
Tj = 25 C
max
3
T2+ G+
T2+ G-
T2- G-
T2- G+
2.5
2
Vo = 1.175 V
Rs = 0.0316 Ohms
1.5
1
0.5
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
BT138
Zth j-mb (K/W)
10
1
TRIAC
3
2.5
2
unidirectional
bidirectional
0.1
1.5
1
t
P
p
D
0.01
t
0.5
0
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
dVD/dt (V/us)
1000
IH(Tj)
IH(25C)
TRIAC
3
2.5
2
100
10
1
1.5
1
0.5
0
-50
0
50
100
150
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997
4
Rev 1.200
NXP [ NXP ]
