Philips Semiconductors
Product specification
Triacs
sensitive gate
BT138 series E
BT138
IT(RMS) / A
BT138
Tmb(max) / C
Ptot / W
20
15
10
5
95
= 180
120
99 C
1
102.5
110
15
90
60
10
5
30
117.5
125
15
0
0
-50
0
50
Tmb / C
100
150
0
5
10
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
BT138
ITSM / A
BT138
IT(RMS) / A
1000
100
10
25
20
15
10
5
dIT/dt limit
I
TSM
time
I
T
T2- G+ quadrant
T
Tj initial = 25 C max
10ms 100ms
0
10us
100us
1ms
T / s
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
BT138
100
80
60
40
20
0
BT136
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
0.8
0.6
0.4
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
NXP [ NXP ]
