Philips Semiconductors
Product specification
Triacs
BT137X series
BT137
IT(RMS) / A
BT137X
Ths(max) / C
= 180
Ptot / W
12
10
8
71
80
89
98
120
90
73 C
10
1
8
6
4
2
0
60
30
6
4
107
2
116
125
0
-50
0
50
Ths / C
100
150
0
2
4
6
8
10
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus heatsink temperature Ths.
,
BT137
BT137
BT137
ITSM / A
IT(RMS) / A
1000
100
10
25
20
15
10
5
I
TSM
time
I
T
Tj initial = 25 C max
dIT/dt limit
T2- G+ quadrant
0
10us
100us
1ms
T / s
10ms
100ms
0.01
0.1
1
10
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 73˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
BT137
80
70
60
50
40
30
20
10
0
BT136
1.6
1.4
1.2
1
I
TSM
time
I
T
T
Tj initial = 25 C max
0.8
0.6
0.4
1
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
4
Rev 1.200
NXP [ NXP ]
