Philips Semiconductors
Product specification
Triacs
BT136X series
IGT(Tj)
IGT(25 C)
BT136
IT / A
12
10
8
BT136
Tj = 125 C
Tj = 25 C
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
2.5
2
Vo = 1.27 V
Rs = 0.091 ohms
6
1.5
1
4
2
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
BT136
Zth j-hs (K/W)
10
1
TRIAC
with heatsink compound
3
2.5
2
without heatsink compound
unidirectional
bidirectional
1.5
1
t
P
D
0.1
0.01
p
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
dVcom/dt (V/us)
1000
IH(Tj)
IH(25C)
TRIAC
3
2.5
2
off-state dV/dt limit
BT136...G SERIES
BT136 SERIES
100
BT136...F SERIES
1.5
1
10
0.5
0
dIcom/dt = 5.1 3.9
A/ms
3
2.3 1.8 1.4
100
1
-50
0
50
Tj / C
100
150
0
50
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
October 1997
5
Rev 1.200
NXP [ NXP ]
