Philips Semiconductors
Product specification
Triacs
BT136X series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT136X-
VDM = 67% VDRM(max)
...
...F
...G
dVD/dt
dVcom/dt
tgt
Critical rate of rise of
off-state voltage
;
100
50
200
250
50
2
-
-
-
V/µs
V/µs
µs
Tj = 125 ˚C; exponential
waveform; gate open
circuit
Critical rate of change of
commutating voltage
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 4 A;
-
-
-
-
10
-
dIcom/dt = 1.8 A/ms; gate
open circuit
Gate controlled turn-on
time
ITM = 6 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
October 1997
3
Rev 1.200
NXP [ NXP ]
