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BT131 参数 Datasheet PDF下载

BT131图片预览
型号: BT131
PDF下载: 下载PDF文件 查看货源
内容描述: 双向可控硅逻辑电平 [Triacs logic level]
分类和应用: 触发装置可控硅三端双向交流开关
文件页数/大小: 6 页 / 53 K
品牌: NXP [ NXP ]
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Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT131 series  
IT(RMS) / A  
Ptot / W  
1.4  
Tmb(max) / C  
=180  
41  
53  
65  
77  
89  
101  
1.2  
1
51 C  
1.2  
1
120  
90  
1
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
60  
30  
113  
125  
0
0
-50  
0
50  
100  
150  
0
0
0.2  
0.4  
0.6  
IT(RMS) / A  
0.8  
1
1.2  
Tlead / C  
Fig.1. Maximum on-state dissipation, Ptot, versus rms  
on-state current, IT(RMS), where α = conduction angle.  
Fig.4. Maximum permissible rms current IT(RMS) ,  
versus lead temperature Tlead.  
ITSM / A  
IT(RMS) / A  
1000  
3
2.5  
2.0  
1.5  
1
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
100  
dIT/dt limit  
T2- G+ quadrant  
0.5  
10  
10us  
0
100us  
1ms  
T / s  
10ms  
100ms  
0.01  
0.1  
surge duration / s  
1
10  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp 20ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tlead 51˚C.  
VGT(Tj)  
VGT(25 C)  
ITSM / A  
20  
15  
10  
1.6  
1.4  
1.2  
1
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
0.8  
0.6  
0.4  
5
0
10  
100  
1000  
-50  
0
50  
Tj / C  
100  
150  
Number of cycles at 50Hz  
Fig.3. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
April 1998  
3
Rev 1.000  
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