Philips Semiconductors
Product specification
Triacs
logic level
BT131 series
1.4
1.2
Ptot / W
BT132D
Tmb(max) / C
IT(RMS) / A
41
53
65
0.8
1.2
BT132D
=180
1
1
51 C
1
0.8
0.6
0.4
0.2
0
0
120
90
60
30
77
0.6
89
0.4
101
113
0.2
0
0.2
0.4
0.6
IT(RMS) / A
0.8
1
125
1.2
0
-50
0
50
100
150
Tlead / C
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus lead temperature T
lead
.
1000
ITSM / A
BT132D
3
IT
T
ITSM
IT(RMS) / A
BT132D
2.5
time
Tj initial = 25 C max
100
dI
T
/dt limit
T2- G+ quadrant
10
10us
2.0
1.5
1
0.5
0
0.01
100us
1ms
T/s
10ms
100ms
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
lead
≤
51˚C.
VGT(Tj)
VGT(25 C)
20
ITSM / A
BT136
IT
I TSM
T
time
1.6
1.4
1.2
1
0.8
BT136
15
Tj initial = 25 C max
10
5
0.6
0
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
April 1998
3
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
