Philips Semiconductors
Product specification
Triacs
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate
triacs in a plastic envelope, intended
for use in general purpose
bidirectional switching and phase
control applications. These devices
are intended to be interfaced directly
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
BT131 series
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT131-
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
MAX. MAX. UNIT
500
500
1
16
600
600
1
16
V
A
A
PINNING - TO92
PIN
1
2
3
DESCRIPTION
main terminal 2
PIN CONFIGURATION
SYMBOL
T2
gate
main terminal 1
3 2 1
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
lead
≤51
˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
1
16
17.6
1.28
50
50
50
10
2
5
5
0.5
150
125
MAX.
-600
600
1
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
April 1998
1
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
