Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
50
handbook, halfpage
gain
(dB)
40
G UM
30
MSG
20
MBB280
50
handbook, halfpage
gain
(dB)
40
G UM
MBB281
30
MSG
20
G max
10
G max
10
0
10
10
2
10
3
f (MHz)
10
4
0
10
10
2
10
3
f (MHz)
10
4
I
C
= 5 mA; V
CE
= 10 V.
G
UM
= maximum unilateral power gain; MSG = maximum stable gain;
G
max
= maximum available gain.
I
C
= 15 mA; V
CE
= 10 V.
G
UM
= maximum unilateral power gain; MSG = maximum stable gain;
G
max
= maximum available gain.
Fig.9
Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
MBB277
MBB276
40
handbook, halfpage
BS
(mS)
20
F = 3.0 dB
2.5
0
1.8
1.7
20
2.0
30
handbook, halfpage
BS
(mS)
20
3.0
10
2.5
0
2.4
10
F = 3.5 dB
20
40
0
20
40
60
80
G S (mS)
30
0
20
40
G S (mS)
60
I
C
= 4 mA; V
CE
= 10 V; f = 800 MHz.
I
C
= 14 mA; V
CE
= 10 V; f = 800 MHz.
Fig.11 Circles of constant noise figure;
typical values.
Fig.12 Circles of constant noise figure;
typical values.
1997 Oct 29
6
PHILIPS [ NXP SEMICONDUCTORS ]
