Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB274
MBB275
handbook, halfpage
1
Cc
handbook, halfpage
6
(pF)
0.8
fT
(GHz)
4
0.6
0.4
2
0.2
0
0
5
10
15
VCB (V)
20
0
0
10
20
I C (mA)
30
I
C
= i
c
= 0; f = 1 MHz; T
j
= 25
°C.
V
CE
= 10 V; f = 500 MHz; T
amb
= 25
°C.
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
Fig.6
Transition frequency as a function of
collector current; typical values.
handbook,
30
halfpage
MBB278
handbook,
30
halfpage
MBB279
gain
(dB)
MSG
20
G UM
gain
(dB)
20
MSG
G UM
10
10
0
0
5
10
15
20
0
25
IC (mA)
0
5
10
15
25
20
I C (mA)
V
CE
= 10 V; f = 500 MHz.
MSG = maximum stable gain;
G
UM
= maximum unilateral power gain.
V
CE
= 10 V; f = 1 GHz.
MSG = maximum stable gain;
G
UM
= maximum unilateral power gain.
Fig.7
Gain as a function of collector current;
typical values.
Fig.8
Gain as a function of collector current;
typical values.
1997 Oct 29
5
PHILIPS [ NXP SEMICONDUCTORS ]
