Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
FEATURES
•
Very high power gain
•
Low noise figure
•
High transition frequency
•
Emitter is thermal lead
•
Low feedback capacitance.
APPLICATIONS
•
RF front end
•
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
•
Radar detectors
•
Pagers
•
Satellite television tuners (SATV)
•
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
T
s
≤
103
°C
I
C
= 25 mA; V
CE
= 2 V; T
j
= 25
°C
I
C
= 0; V
CB
= 2 V; f = 1 MHz
open emitter
collector-emitter voltage open base
CONDITIONS
MIN.
−
−
−
−
50
−
2
Top view
1
MSB842
BFG425W
PINNING
PIN
1
2
3
4
emitter
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
4
Marking code:
P5.
Fig.1 Simplified outline SOT343R.
TYP.
−
−
25
−
80
95
25
20
1.2
MAX.
10
4.5
30
135
120
−
−
−
−
UNIT
V
V
mA
mW
fF
GHz
dB
dB
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°C −
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°C −
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
CAUTION
−
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
2
PHILIPS [ NXP SEMICONDUCTORS ]
