Philips Semiconductors
Product specification
NPN 25 GHz wideband transistor
SPICE parameters for the BFG425W die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
(1)
20
(1)
21
(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
(1)
35
(1)
36
(1)
37
(1)
38
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
VALUE
47.17
145.0
0.993
31.12
304.0
300.2
3.000
11.37
0.985
1.874
0.121
484.8
1.546
14.41
0.000
6.175
177.9
1.780
1.500
1.110
3.000
310.9
900.0
0.346
4.122
68.20
2.004
1.525
0.000
137.7
556.9
0.207
0.500
0.000
667.5
418.3
0.239
0.550
−
−
V
mA
fA
−
−
−
V
A
aA
−
Ω
A
Ω
mΩ
Ω
−
eV
−
fF
mV
−
ps
−
V
A
deg
fF
mV
−
−
ns
fF
mV
−
−
C
be
C
cb
C
ce
L1
L2
L3 (note 1)
Note
DESIGNATION
80
2
80
1.1
1.1
0.25
VALUE
List of components
(see Fig.14)
E
QL
B
= 50; QL
E
= 50; QL
B,E
(f) = QL
B,E
√(f/f
c
)
f
c
= scaling frequency = 1 GHz.
L3
B
L1
B'
E'
C'
handbook, halfpage
BFG425W
UNIT
aA
SEQUENCE No.
39
(2)(3)
40
(2)
41
(3)
Notes
PARAMETER
C
bp
R
sb1
R
sb2
VALUE
145
25
19
Ω
Ω
UNIT
fF
1. These parameters have not been extracted, the
default values are shown.
2. Bonding pad capacity C
bp
in series with substrate
resistance R
sb1
between B′ and E′.
3. Bonding pad capacity C
bp
in series with substrate
resistance R
sb2
between C′ and E′.
C cb
L2
C
C be
Cce
MGD956
Fig.14 Package equivalent circuit SOT343R2.
UNIT
fF
fF
fF
nH
nH
nH
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
1998 Mar 11
9
PHILIPS [ NXP SEMICONDUCTORS ]
