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BF324 参数 Datasheet PDF下载

BF324图片预览
型号: BF324
PDF下载: 下载PDF文件 查看货源
内容描述: PNP中频晶体管 [PNP medium frequency transistor]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 59 K
品牌: NXP [ NXP ]
 浏览型号BF324的Datasheet PDF文件第1页浏览型号BF324的Datasheet PDF文件第2页浏览型号BF324的Datasheet PDF文件第4页浏览型号BF324的Datasheet PDF文件第5页浏览型号BF324的Datasheet PDF文件第6页浏览型号BF324的Datasheet PDF文件第7页浏览型号BF324的Datasheet PDF文件第8页  
Philips Semiconductors  
Product specification  
PNP medium frequency transistor  
BF324  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
30  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
open base  
30  
4  
open collector  
collector current (DC)  
peak collector current  
total power dissipation  
storage temperature  
25  
25  
300  
+150  
150  
+150  
mA  
mA  
mW  
°C  
ICM  
Ptot  
Tamb 25 °C; note 1  
Tstg  
Tj  
65  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient note 1  
420  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
collector cut-off current  
emitter cut-off current  
DC current gain  
CONDITIONS  
IE = 0; VCB = 30 V  
MIN.  
TYP.  
MAX.  
UNIT  
nA  
ICBO  
IEBO  
hFE  
50  
IC = 0; VEB = 4 V  
VCE = 10 V  
100  
nA  
IC = 1 mA  
45  
IC = 4 mA  
25  
VBE  
Crb  
fT  
base-emitter voltage  
feedback capacitance  
transition frequency  
IC = 4 mA; VCE = 10 V  
IC = 0; VCE = 10 V; f = 1 MHz  
VCE = 10 V; f = 100 MHz  
IC = 1 mA  
760  
mV  
pF  
0.3  
350  
450  
440  
MHz  
MHz  
MHz  
IC = 4 mA  
400  
IC = 8 mA  
1997 Jul 07  
3
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