Philips Semiconductors
Product specification
PNP medium frequency transistor
BF324
FEATURES
PINNING
PIN
• Low current (max. 25 mA)
• Low voltage (max. 30 V).
DESCRIPTION
1
2
3
emitter
base
APPLICATIONS
collector
• RF stages in FM front-ends in common base
configuration.
1
handbook, halfpage
3
1
2
3
DESCRIPTION
2
PNP medium frequency transistor in a TO-92; SOT54
plastic package.
MAM281
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
VCEO
ICM
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
open emitter
open base
−
−
−
−
−
−
−
−
−
−30
−30
−25
300
−
V
V
mA
mW
Ptot
hFE
fT
Tamb ≤ 25 °C
IC = −4 mA; VCE = −10 V
25
transition frequency
IC = −4 mA; VCE = −10 V; f = 100 MHz
−
450
−
MHz
1997 Jul 07
2
NXP [ NXP ]
