Philips Semiconductors
Product specification
NPN power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
BD135; BD137; BD139
CONDITIONS
note 1
VALUE
100
10
UNIT
K/W
K/W
MIN.
−
−
−
40
63
25
63
100
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
190
1.3
MAX.
100
10
100
−
250
−
160
250
0.5
1
−
1.6
UNIT
nA
µA
nA
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; (see Fig.2)
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
DC current gain
I
C
= 150 mA; V
CE
= 2 V;
BD135-10; BD137-10; BD139-10 (see Fig.2)
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 2 V
I
C
= 50 mA; V
CE
= 5 V;
f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
BD135-16; BD137-16; BD139-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
V
V
MHz
1999 Apr 12
3
PHILIPS [ NXP SEMICONDUCTORS ]
