Philips Semiconductors
Product specification
NPN power transistors
FEATURES
•
High current (max. 1.5 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
handbook, halfpage
BD135; BD137; BD139
PINNING
PIN
1
2
3
emitter
collector, connected to metal part of
mounting surface
base
DESCRIPTION
2
3
1
1
2
3
Top view
MAM254
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BD135
BD137
BD139
V
CEO
collector-emitter voltage
BD135
BD137
BD139
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
≤
70
°C
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
45
60
80
5
1.5
2
1
8
+150
150
+150
V
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
45
60
100
V
V
V
MIN.
MAX.
UNIT
1999 Apr 12
2
PHILIPS [ NXP SEMICONDUCTORS ]
