Philips Semiconductors
Product specification
NPN medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; (see Fig.2)
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
DC current gain
BCX54-10; 55-10; 56-10
BCX54-16; 55-16; 56-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation
voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 2 V
I
C
= 150 mA;
V
CE
= 2 V
BCX54; BCX55; BCX56
MIN.
−
−
−
40
63
25
63
100
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
130
1.3
MAX.
100
10
100
−
250
−
160
250
0.5
1
−
1.6
UNIT
nA
µA
nA
I
C
= 150 mA; V
CE
= 2 V; (see Fig.2)
V
V
MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
−
handbook, full pagewidth
160
MBH729
hFE
120
VCE = 2 V
80
40
0
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typical values.
1999 Apr 19
4
PHILIPS [ NXP SEMICONDUCTORS ]
