Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCX54
BCX55
BCX56
V
CEO
collector-emitter voltage
BCX54
BCX55
BCX56
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BCX54; BCX55; BCX56
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
45
60
100
45
60
80
5
1
1.5
0.2
1.3
+150
150
+150
V
V
V
V
V
V
V
A
A
A
W
UNIT
°C
°C
°C
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
94
14
UNIT
K/W
K/W
1999 Apr 19
3
PHILIPS [ NXP SEMICONDUCTORS ]
