NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Quick reference data
…continued
Parameter
DC current gain
h
FE
selection -16
h
FE
selection -25
Conditions
V
CE
=
1
V;
I
C
=
500
mA
V
CE
=
1
V;
I
C
=
500
mA
V
CE
=
1
V;
I
C
=
500
mA
Table 2.
Symbol
h
FE
Min
85
100
160
Typ
-
-
-
Max
375
250
375
Unit
[1]
Pulse test: t
p
300
s;
= 0.02.
2. Pinning information
Table 3.
Pin
SOT223
1
2
3
4
base
collector
emitter
collector
1
2
3
3
sym028
Pinning
Description
Simplified outline
Graphic symbol
4
1
2, 4
SOT89
1
2
3
emitter
collector
base
3
2
1
3
1
006aaa231
2
SOT1061
1
2
3
base
emitter
collector
3
1
2
1
2
sym013
3
Transparent top view
BCP69_BC869_BC69PA
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
2 of 24
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