NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
BCP69
single pulse;
t
p
1 ms
T
amb
25
C
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
Min
-
-
-
-
-
-
-
Max
32
20
5
2
3
0.4
0.4
Unit
V
V
V
A
A
A
A
-
-
-
-
-
-
-
-
-
-
-
-
55
65
0.65
1.00
1.35
0.50
0.95
1.35
0.42
0.83
1.10
0.81
1.65
150
+150
+150
W
W
W
W
W
W
W
W
W
W
W
C
C
C
BC869
BC69PA
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
.
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
4 of 24
PHILIPS [ NXP SEMICONDUCTORS ]
