BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac707
006aab404
400
−2.4
I
C
(1)
h
(A)
FE
I
(mA) = −12.0
−2.0
B
−10.8
−8.4
300
(2)
−9.6
−7.2
−1.6
−1.2
−0.8
−0.4
0
−6.0
−3.6
200
−4.8
−2.4
(3)
100
−1.2
0
-10
-4
-3
-2
-1
-10
-10
-10
-1
-10
0
−1
−2
−3
−4
−5
I
(A)
V
CE
(V)
C
VCE = 1 V
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3)
Tamb = 55 C
Fig 19. hFE selection -25: DC current gain as a
function of collector current; typical values
Fig 20. hFE selection -25: collector current as a
function of collector-emitter voltage; typical
values
006aac708
006aac709
-1.2
–1
V
V
(V)
CEsat
(V)
BE
(1)
–1
-0.8
–10
(1)
(2)
(2)
(3)
–2
-0.4
–10
(3)
–3
0.0
-10
–10
-1
2
3
4
–1
2
3
4
-1
-10
-10
-10
-10
(mA)
–10
–1
–10
–10
–10
–10
I (mA)
C
I
C
VCE = 1 V
IC/IB = 10
(1) Tamb = 55 C
(1) Tamb = 100 C
(2)
Tamb = 25 C
(2)
Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 55 C
Fig 21. hFE selection -25: base-emitter voltage as a
function of collector current; typical values
Fig 22. hFE selection -25: collector-emitter saturation
voltage as a function of collector current;
typical values
BCP69_BC869_BC69PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 12 October 2011
15 of 24
NXP [ NXP ]
